Samsung UFS 4.0 flash storage is fast accelerating

High-end smartphones are getting the latest display and processor technology, and some manufacturers are making sure that the built-in flash storage doesn’t hold back on system performance. This is what the Universal Flash Storage standard is all about since its inception, with Samsung, the world’s largest memory and smartphone maker, the first to build a solution for its latest version 4.0.

South Korean multi has announced it will begin mass production in the third quarter of the first UFS 4.0 memory chips, which could theoretically double the performance of UFS 3.1 ICs in current high-end models such as the Galaxy S22.

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According to the manufacturer, chips that meet the new memory standard will be specifically suited for high-traffic 5G and AR / VR applications.

UFS 4.0 memory chips based on seventh-generation V-NAND technology and a matching controller will theoretically be capable of sequential read and write speeds of up to 4200 MB / s and 2800 MB / s, twice as much as the former 1, Increasing 6x speed over UFS 3.1 caches.

The good news is that in parallel with achieving greater performance, the engineers have also managed to significantly lower the consumption of the tile. According to the manufacturer, the new chip will be capable of a sequential read speed of 6 MB / s per milliampere, an improvement of 46% over Samsung’s UFS 3.1 compliant storage devices.

Samsung will make a number of variations of the 11x13x1 millimeter chips with a capacity of up to 1 TB.


Source: HWSW Informatikai Hírmagazin by www.hwsw.hu.

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