The development of memory for graphics cards continues and the company Samsung now represents a new type GDDR6W. These use Fan-Out Wafer-Level Packaging (FOWLP) technology, and their major benefit is that they use stacking of chips on top of each other. With the same area as GDDR6 memories, thanks to the new structure, they have twice the capacity, and from 16Gb chips we are now getting to 32Gb (4GB) chips. Another change is that the two layers together also bring double the amount of pins, so one chip now has a 64-bit interface instead of a 32-bit one. If the manufacturer puts the same number of chips on the card as today, the capacity of the graphics memory will double and the same applies to transfer speeds.
Thanks to FOWLP, the memories are placed directly on the silicon wafer and not on the PCB, reducing the height from 1.1mm to just 0.7mm despite the layering. The whole solution is also supposed to improve heat distribution, which is at a similar level to that of traditional GDDR6 memories, despite the smaller height of the resulting chip. If the manufacturer used eight 24Gbps GDDR6X memory chips today, it would achieve a 256-bit bus, a capacity of 16 GB and a speed of 768 GB/s. In the case of GDDR6W and 22Gbps models, 8 chips would mean a capacity of 32 GB, a 512-bit bus and, thanks to the wider bus, a speed of up to 1.4 TB/s. This brings it considerably closer to the HBM2E memory, which would offer 1.6 TB/s with 3.2 Gbps chips and a 4096-bit bus. As a result, the advantage is also a much simpler and cheaper construction compared to the HBM2E.
Samsung is now trying to standardize GDDR6W memories and expects their deployment in the mobile sphere and vice versa for high-performance accelerators (HPC, AI).
Source: Svět hardware by www.svethardware.cz.
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