Samsung Electronics develops next-generation ‘8-nano RF process technology’… Expands RF foundry for 5G

Samsung Electronics announced on the 9th that it will develop next-generation ‘8-nano RF (Radio Frequency) process technology’ and strengthen its semiconductor foundry service for 5G mobile communication.

Samsung Electronics is actively targeting the 5G communication semiconductor market from sub 6GHz to millimeter wave (mmWave) by providing an RF chip for 5G communication that supports multi-channel and multi-antenna as an 8-nano RF foundry as a one-chip solution.

After starting 28nm 12-inch RF process foundry service in 2015, Samsung Electronics expanded its RF foundry solution to 8nm, including 14nm, which started mass production for the first time in the industry in 2017.

The RF chip is a radio frequency transceiver semiconductor that converts the digital signal from the modem chip into analog and converts it into a radio frequency that we can use and also transmits it to the modem chip. It consists of an analog circuit area that plays the role of over-frequency reception and amplification.

Next-generation '8-nano RF process technology' development infographic = provided by Samsung Electronics

Since 2017, Samsung Electronics has shipped more than 500 million mobile RF chips, mainly for premium smartphones. Samsung Electronics’ 8nm RF process can reduce the RF chip area by about 35% compared to the previous 14nm process and improves power efficiency by about 35%.

As the semiconductor process is refined, the performance of the logic area improves, but in the analog area, the resistance increases due to the narrow line width, the amplification performance of the reception frequency decreases, and the power consumption increases. Samsung Electronics has developed ‘RFeFET™ (RF extremeFET)’, an RF-only semiconductor device that can greatly amplify a signal while using little power, and applied it to the 8nm RF process.

In particular, Samsung Electronics applied a specific material to the periphery of the channel, the passage through which electrons flow in RFeFET™, and maximized the electron mobility through physical stimulation.

The performance of RFeFET™ is greatly improved, reducing the total number of transistors in the RF chip, reducing power consumption and reducing the area of ​​the analog circuit.

“Samsung Electronics’ 8-nano-based RF foundry, which has implemented process miniaturization and RF performance improvement at the same time, will provide optimal solutions to customers with the advantages of small size, low power, and high-quality communication,” said Hyeong-jin Lee, master of Samsung Electronics’ Technology Development Department. “Samsung Electronics will actively respond to the next-generation wireless communication market, including 5G, based on its cutting-edge RF foundry competitiveness,” he said.

Samsung Electronics plans to accelerate the achievement of ‘Semiconductor Vision 2030’ through ultra-fine process technology, stable mass production system, and expansion of the foundry ecosystem.

Reporter Lee Ho [email protected]


Source: 전체 – 넥스트데일리 by www.nextdaily.co.kr.

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