Intel’s new names for its processes better reflect the naming of competing semiconductor manufacturers, including transistor density.
An Intel Accelerated broadcast is currently underway, but press releases for the event have already been released. On the process side of Intel, major reforms are promised, including naming, and at the same time the company was able to say that it now produces more than 10-nanometer circuits.
According to Intel’s new naming convention, the process formerly known as the 10-nanometer SuperFin Enhanced will be known as “Intel 7”. The name is clearly a reference to competitors ’processes that Intel believes its processes match. Samsung’s 7 nm class processes are known as 7LPP and 7LPE, while TSMC uses the names N7 and N7P.
The Intel 7 process will be used to manufacture Alder Lake and Sapphire Rapids processors, as well as probably Raptor Lake processors. In addition, the process is used to fabricate Xe-HP circuits and Xe-HPC IO chips. The process is said to improve performance per watt by 10-15% compared to the 10 nanometer SuperFin process. The process is already in production use and will arrive in the hands of consumers in the fall with processors based on the Alder Lake architecture.
The EUV process, formerly known as the 7-nanometer process, will be known as Intel 4. The process will be used at least in the production of Compute chips for Meteor Lake and Granite Rapids architectures. The process offers 20 better performance per watt compared to Intel 7 and has already produced the first test chips. Intel plans to start the production process in late 2022 and the first products will hit the market in the first half of 2023.
Intel 3, on the other hand, was formerly known as 7 nm + and will take greater advantage of EUV, offering denser packed transistors, new high-performance libraries and 18% better performance per watt than Intel 4. The process is set to follow 4 on a fast schedule, as the first unnamed products are scheduled to be launched as early as the second half of 2023.
In 2024, it is time to jump from FinFET transistors to new Gate-All-Around type RibbonFET transistors. The process, formerly known as the 5 nm process, will be known as Intel 20A, where A refers to Ångström, or Angstrom in English-speaking countries. One Ångström is 0.1 nanometer or 100 picometer.
The Intel 20A also brings new PowerVia technology. Where the current model has the lowest transistor layer on top of it, with metal layers on top of the circuit for internal routing and finally external contacts, the PowerVia transistors move the transistors to the center of the circuit. The technology simplifies both power supply and signal routing, but on the other hand, the heat generated by the transistors moving to the center will pass through the signal routing.
In the footsteps of the 20 Ångström process follows 18A, formerly known as 5nm +. According to the company, the process is set to make Intel once again the sharpest market leader past competing manufacturers. The process is scheduled to enter the market in 2025.
Source: io-tech.fi by www.io-tech.fi.
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